High selectivity Inductively Coupled Plasma etching of GaAs over InGaP: Fid-Bau Portal

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Hays, D. C. / Cho, H. / Lee, J. W. / Devre, M. W. / Reelfs, B. H. / Johnson, D. / Sasserath, J. N. / Meyer, L. C. / Toussaint, E. / Ren, F.

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High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Hays, D. C. / Cho, H. / Lee, J. W. / Devre, M. W. / Reelfs, B. H. / Johnson, D. / Sasserath, J. N. / Meyer, L. C. / Toussaint, E. / Ren, F.

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Hays, D. C. / Cho, H. / Lee, J. W. / Devre, M. W. / Reelfs, B. H. / Johnson, D. / Sasserath, J. N. / Meyer, L. C. / Toussaint, E. / Ren, F.

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Document information

Title:

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Contributors:

Hays, D. C. (author) / Cho, H. (author) / Lee, J. W. (author) / Devre, M. W. (author) / Reelfs, B. H. (author) / Johnson, D. (author) / Sasserath, J. N. (author) / Meyer, L. C. (author) / Toussaint, E. (author) / Ren, F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 156 ; 76-84

Publication date:

2000-01-01

Size:

9 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Hays, D.C. / Cho, H. / Jung, K.B. et al. | British Library Online Contents | 1999

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