A platform for research: civil engineering, architecture and urbanism
Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
Kaminski, P. (author) / Pawlowski, M. (author) / Cwirko, R. (author) / Palczewska, M. (author) / Kozlowski, R. (author) / Balkanski, M. / Kamimura, H. / Mahajan, S.
1996-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Deep Level Point Defects in Semi-Insulating SiC
British Library Online Contents | 2006
|Defects in Neutron Irradiated, LEC Semi-insulating GaAs
British Library Online Contents | 1997
|Photoluminescence and photoacoustic investigation of residual defects in semi-insulating LEC GaAs
British Library Online Contents | 1993
|Impact of thermal treatments on deep level behaviour in semi-insulating GaAs
British Library Online Contents | 1994
|Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs
British Library Online Contents | 1993
|