A platform for research: civil engineering, architecture and urbanism
Optimization of the MOVPE growth of GaN on sapphire
Optimization of the MOVPE growth of GaN on sapphire
Optimization of the MOVPE growth of GaN on sapphire
Briot, O. (author) / Alexis, J. P. (author) / Tchounkeu, M. (author) / Aulombard, R. L. (author) / Aulombard, R. L. / Cavenett, B. C. / Gil, B. / Triboulet, R.
1997-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
MOVPE growth of InGaN on sapphire using growth initiation cycles
British Library Online Contents | 1997
|Microstructural studies of GaN grown on (0001) sapphire by MOVPE
British Library Online Contents | 1997
|Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
British Library Online Contents | 2003
|Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment
British Library Online Contents | 2004
|Growth of high-quality ZnTe layers by MOVPE
British Library Online Contents | 1996
|