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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
Tsuda, M. (author) / Watanabe, K. (author) / Kamiyama, S. (author) / Amano, H. (author) / Akasaki, I. (author) / Liu, R. (author) / Bell, A. (author) / A. Ponce, F. (author)
APPLIED SURFACE SCIENCE ; 216 ; 585-589
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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