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    Positron annihilation induced Auger electron spectroscopy (PAES) study of the structure of Si/H/Ge(100)interfaces

    New search for: Kim, J. H.
    New search for: Wheeler, S.
    New search for: Nangia, A.
    New search for: Jung, E.
    New search for: Weiss, A. H.

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    Positron annihilation induced Auger electron spectroscopy (PAES) study of the structure of Si/H/Ge(100)interfaces

    New search for: Kim, J. H.
    New search for: Wheeler, S.
    New search for: Nangia, A.
    New search for: Jung, E.
    New search for: Weiss, A. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Positron annihilation induced Auger electron spectroscopy (PAES) study of the structure of Si/H/Ge(100)interfaces

    New search for: Kim, J. H.
    New search for: Wheeler, S.
    New search for: Nangia, A.
    New search for: Jung, E.
    New search for: Weiss, A. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Positron annihilation induced Auger electron spectroscopy (PAES) study of the structure of Si/H/Ge(100)interfaces

    Contributors:

    Kim, J. H. (author) / Wheeler, S. (author) / Nangia, A. (author) / Jung, E. (author) / Weiss, A. H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 116 ; 324-329

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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