A platform for research: civil engineering, architecture and urbanism
Deep levels in Si-doped Al~xGa~1~-~xAs layers
Deep levels in Si-doped Al~xGa~1~-~xAs layers
Deep levels in Si-doped Al~xGa~1~-~xAs layers
Chung, C. K. (author) / Kang, T. W. (author) / Hong, C. Y. (author) / Chang, K. S. (author) / Kim, T. W. (author)
APPLIED SURFACE SCIENCE ; 115 ; 174-179
1997-01-01
6 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers
British Library Online Contents | 2003
|Oxygen-related deep levels in oxygen doped EFG poly-Si
British Library Online Contents | 2000
|Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
British Library Online Contents | 2003
|Emission mechanism of localized deep levels in BeZnO layers grown by hybrid beam method
British Library Online Contents | 2008
|Deep levels in neutron-transmutation-doped and thermally annealed semi-insulating GaAs
British Library Online Contents | 1998
|