A platform for research: civil engineering, architecture and urbanism
Defect processes causing free carrier variations around dislocations in n-type doped GaAs
Defect processes causing free carrier variations around dislocations in n-type doped GaAs
Defect processes causing free carrier variations around dislocations in n-type doped GaAs
Paetzold, O. (author) / Sonnenberg, K. (author) / Irmer, G. (author) / Jantz, W. / Baeumler, M.
1997-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Spatial Distribution of Microdefects Around Dislocations in Si-Doped GaAs
British Library Online Contents | 1995
|Optical and electrical non-uniformity around dislocations in silicon doped GaAs
British Library Online Contents | 1997
|Theory of Dislocations in GaAs
British Library Online Contents | 1993
|Dislocations around precipitates in AlGaN epilayers
British Library Online Contents | 2002
|Point defect interaction with dislocations in silicon
British Library Online Contents | 2001
|