A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy
In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy
In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy
Sakamoto, H. (author) / Takakuwa, Y. (author) / Enta, Y. (author) / Horie, T. (author) / Hori, T. (author) / Yamaguchi, T. (author) / Miyamoto, N. (author) / Kato, H. (author)
APPLIED SURFACE SCIENCE ; 117/118 ; 77-81
1997-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ultraviolet Photoelectron Spectroscopy of Solids
| Springer Verlag | 1992
Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
| British Library Online Contents | 1994
Growth Kinetics of Silicon Molecular Beam Epitaxy
| Springer Verlag | 1988
| British Library Online Contents | 1999
Effects of oxygen on selective silicon deposition using disilane
| British Library Online Contents | 1999