Elimination of sub-oxide transition regions at Si-SiO~2 interfaces by rapid thermal annealing at 900�C: Fid-Bau Portal

Elimination of sub-oxide transition regions at Si-SiO~2 interfaces by rapid thermal annealing at 900C

Lucovsky, G. / Banerjee, A. / Niimi, H. / Koh, K. / Hinds, B. / Meyer, C. / Luepke, G. / Kurz, H.

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Elimination of sub-oxide transition regions at Si-SiO~2 interfaces by rapid thermal annealing at 900C

Lucovsky, G. / Banerjee, A. / Niimi, H. / Koh, K. / Hinds, B. / Meyer, C. / Luepke, G. / Kurz, H.

Elimination of sub-oxide transition regions at Si-SiO~2 interfaces by rapid thermal annealing at 900C

Lucovsky, G. / Banerjee, A. / Niimi, H. / Koh, K. / Hinds, B. / Meyer, C. / Luepke, G. / Kurz, H.

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Title:

Elimination of sub-oxide transition regions at Si-SiO~2 interfaces by rapid thermal annealing at 900C

Contributors:

Lucovsky, G. (author) / Banerjee, A. (author) / Niimi, H. (author) / Koh, K. (author) / Hinds, B. (author) / Meyer, C. (author) / Luepke, G. (author) / Kurz, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 117/118 ; 202-206

Publication date:

1997-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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