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Interfacial sub-oxide regions at Si-SiO~2 interfaces: minimization by post-oxidation rapid thermal anneal
Interfacial sub-oxide regions at Si-SiO~2 interfaces: minimization by post-oxidation rapid thermal anneal
Interfacial sub-oxide regions at Si-SiO~2 interfaces: minimization by post-oxidation rapid thermal anneal
Lucovsky, G. (author) / Koh, K. (author) / Chaflin, B. (author) / Hinds, B. (author)
APPLIED SURFACE SCIENCE ; 123/124 ; 490-495
1998-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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