A platform for research: civil engineering, architecture and urbanism
Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Hara, N. (author) / Suehiro, H. (author) / Kuroda, S. (author)
APPLIED SURFACE SCIENCE ; 117/118 ; 352-356
1997-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs
British Library Online Contents | 2004
|British Library Online Contents | 1999
|Pd/Si/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT
British Library Online Contents | 2003
|Pd/Ge/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT
British Library Online Contents | 2002
|British Library Online Contents | 1995
|