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Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Interface property of Mg-based dual ion implanted p^+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
Hara, N. (Autor:in) / Suehiro, H. (Autor:in) / Kuroda, S. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 352-356
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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