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Neutron transmutation doping of III-VI layered semiconductors

Mari, B. / Fenollosa, R. / Manjon, F. J. / Clemente, R. / Mu�oz, V. / Segura, A.

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Neutron transmutation doping of III-VI layered semiconductors

Mari, B. / Fenollosa, R. / Manjon, F. J. / Clemente, R. / Mu�oz, V. / Segura, A.

Neutron transmutation doping of III-VI layered semiconductors

Mari, B. / Fenollosa, R. / Manjon, F. J. / Clemente, R. / Mu�oz, V. / Segura, A.

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Check availability in my library

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Document information

Title:

Neutron transmutation doping of III-VI layered semiconductors

Contributors:

Mari, B. (author) / Fenollosa, R. (author) / Manjon, F. J. (author) / Clemente, R. (author) / Mu�oz, V. (author) / Segura, A. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 13 ; 954-956

Publication date:

1997-01-01

Size:

3 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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