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The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. / Nouet, G. / Botchkarev, A. / Salvador, A. / Morkoc, H.

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The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. / Nouet, G. / Botchkarev, A. / Salvador, A. / Morkoc, H.

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Ruterana, P. / Vermaut, P. / Potin, V. / Nouet, G. / Botchkarev, A. / Salvador, A. / Morkoc, H.

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Document information

Title:

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Contributors:

Ruterana, P. (author) / Vermaut, P. (author) / Potin, V. (author) / Nouet, G. (author) / Botchkarev, A. (author) / Salvador, A. (author) / Morkoc, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 72-75

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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