Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations: Fid-Bau Portal

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

Kim, H.-S. / Lee, Y.-H. / Yeom, G.-Y. / Lee, J.-W. / Kim, T.-I.

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Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

Kim, H.-S. / Lee, Y.-H. / Yeom, G.-Y. / Lee, J.-W. / Kim, T.-I.

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

Kim, H.-S. / Lee, Y.-H. / Yeom, G.-Y. / Lee, J.-W. / Kim, T.-I.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

Contributors:

Kim, H.-S. (author) / Lee, Y.-H. (author) / Yeom, G.-Y. (author) / Lee, J.-W. (author) / Kim, T.-I. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 82-87

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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