A platform for research: civil engineering, architecture and urbanism
Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations
Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations
Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations
Kim, H.-S. (author) / Lee, Y.-H. (author) / Yeom, G.-Y. (author) / Lee, J.-W. (author) / Kim, T.-I. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 82-87
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2006
|British Library Online Contents | 2002
|Inductively coupled plasma nitriding of aluminium
British Library Online Contents | 2002
|Inductively Coupled Plasma for Chromatographic Detection
British Library Conference Proceedings | 1993
|