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High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing

Choi, S. R. / Salem, J. A. / Nemeth, N. N.

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High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing

Choi, S. R. / Salem, J. A. / Nemeth, N. N.

High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing

Choi, S. R. / Salem, J. A. / Nemeth, N. N.

Access

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing

Contributors:

Choi, S. R. (author) / Salem, J. A. (author) / Nemeth, N. N. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 33 ; 1325-1332

Publication date:

1998-01-01

Size:

8 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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