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Determination of Threshold Stress Intensity for Crack Growth at High Temperature in Silicon Carbide Ceramics

E. J. Minford / R. E. Tressler

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Determination of Threshold Stress Intensity for Crack Growth at High Temperature in Silicon Carbide Ceramics

E. J. Minford / R. E. Tressler

Determination of Threshold Stress Intensity for Crack Growth at High Temperature in Silicon Carbide Ceramics

E. J. Minford / R. E. Tressler

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Title:

Determination of Threshold Stress Intensity for Crack Growth at High Temperature in Silicon Carbide Ceramics

Contributors:

E. J. Minford (author) / R. E. Tressler (author)

Publication date:

1983

Size:

3 pages

Type of media:

Report

Type of material:

No indication

Language:

English

Keywords:

Ogasawara, T. / Hori, T. / Okada, A. | British Library Online Contents | 1994

Takahashi, K. / Ando, K. / Yoshida, S. et al. | British Library Conference Proceedings | 2004

Choi, S. R. / Salem, J. A. / Nemeth, N. N. | British Library Online Contents | 1998

Sawamura, A. / Watanabe, Y. / Yamamoto, R. | British Library Conference Proceedings | 1993

Fett, T. / Munz, D. / Keller, K. et al. | British Library Online Contents | 1997