Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching Properties: Fid-Bau Portal

Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching Properties

Neudeck, P. G. / Fazi, C.

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Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching Properties

Neudeck, P. G. / Fazi, C.

Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching Properties

Neudeck, P. G. / Fazi, C.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching Properties

Contributors:

Neudeck, P. G. (author) / Fazi, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1037-1040

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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