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    4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

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    4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

    New search for: Rong, H.
    New search for: Sharma, Y.K.
    New search for: Li, F.
    New search for: Jennings, M.R.
    New search for: Mawby, P.A.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

    New search for: Rong, H.
    New search for: Sharma, Y.K.
    New search for: Li, F.
    New search for: Jennings, M.R.
    New search for: Mawby, P.A.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Document information
    Title:

    4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

    Contributors:

    Rong, H. (author) / Sharma, Y.K. (author) / Li, F. (author) / Jennings, M.R. (author) / Mawby, P.A. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 824-827

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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