Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE: Fid-Bau Portal

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. / Tadano, H.

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Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. / Tadano, H.

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. / Tadano, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Contributors:

Tomita, K. (author) / Itoh, K. (author) / Kachi, T. (author) / Tadano, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1141-1144

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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