Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, K. / Asada, K. / Maeda, T. et al. | British Library Online Contents | 2001

Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane

Konno, A. / Senthil, K. / Murata, T. et al. | British Library Online Contents | 2006

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. et al. | British Library Online Contents | 1998

Formation of High Quality SiC on Si(100) at 900^oC using Monomethylsilane Gas-Source MBE

Nakazawa, H. / Suemitsu, M. / Asami, S. | British Library Online Contents | 2000

Heteroepitaxial growth of 3C-SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Morikawa, Y. / Hirai, M. / Ohi, A. et al. | British Library Online Contents | 2007