Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer Layers: Fid-Bau Portal

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer Layers

Strittmatter, A. / Krost, A. / Schatke, K. / Bimberg, D. / Blaesing, J. / Christen, J.

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Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer Layers

Strittmatter, A. / Krost, A. / Schatke, K. / Bimberg, D. / Blaesing, J. / Christen, J.

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer Layers

Strittmatter, A. / Krost, A. / Schatke, K. / Bimberg, D. / Blaesing, J. / Christen, J.

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Title:

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer Layers

Contributors:

Strittmatter, A. (author) / Krost, A. (author) / Schatke, K. (author) / Bimberg, D. (author) / Blaesing, J. (author) / Christen, J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1145-1148

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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