LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers: Fid-Bau Portal

LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers

Strittmatter, A. / Krost, A. / Turck, V. / Straszburg, M. / Bimberg, D. / Blasing, J. / Hempel, T. / Christen, J. / Neubauer, B. / Gerthsen, D.

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LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers

Strittmatter, A. / Krost, A. / Turck, V. / Straszburg, M. / Bimberg, D. / Blasing, J. / Hempel, T. / Christen, J. / Neubauer, B. / Gerthsen, D.

LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers

Strittmatter, A. / Krost, A. / Turck, V. / Straszburg, M. / Bimberg, D. / Blasing, J. / Hempel, T. / Christen, J. / Neubauer, B. / Gerthsen, D.

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Document information

Title:

LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers

Contributors:

Strittmatter, A. (author) / Krost, A. (author) / Turck, V. (author) / Straszburg, M. (author) / Bimberg, D. (author) / Blasing, J. (author) / Hempel, T. (author) / Christen, J. (author) / Neubauer, B. (author) / Gerthsen, D. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 29 - 32

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Strittmatter, A. / Krost, A. / Schatke, K. et al. | British Library Online Contents | 1998

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Microstructure of GaN nucleation layer during initial stage MOCVD growth

Kim, C. C. / Je, J. H. / Yi, M. S. et al. | British Library Online Contents | 2001

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