Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers: Fid-Bau Portal

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

Yamamoto, A. / Shin-ya, T. / Yamauchi, Y. / Hashimoto, A.

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Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

Yamamoto, A. / Shin-ya, T. / Yamauchi, Y. / Hashimoto, A.

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

Yamamoto, A. / Shin-ya, T. / Yamauchi, Y. / Hashimoto, A.

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Check availability in my library

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Document information

Title:

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

Contributors:

Yamamoto, A. (author) / Shin-ya, T. (author) / Yamauchi, Y. (author) / Hashimoto, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1213-1216

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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