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Ga Vacancies as Compensating Centers in Homogeneously or -Doped GaAs(Si) Layers
Ga Vacancies as Compensating Centers in Homogeneously or -Doped GaAs(Si) Layers
Ga Vacancies as Compensating Centers in Homogeneously or -Doped GaAs(Si) Layers
Laine, T. (author) / Saarinen, K. (author) / Hautojaervi, P. (author) / Corbel, C. (author) / Pfeiffer, L. N. (author) / Citrin, P. H. (author) / Ashwin, M. J. (author) / Newman, R. C. (author)
MATERIALS SCIENCE FORUM ; 258/263 ; 879-884
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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