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    Positron annihilation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs

    New search for: Gebauer, J.
    New search for: Krause-Rehberg, R.
    New search for: Domke, C.
    New search for: Ebert, P.
    New search for: Urban, K.

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    Positron annihilation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs

    New search for: Gebauer, J.
    New search for: Krause-Rehberg, R.
    New search for: Domke, C.
    New search for: Ebert, P.
    New search for: Urban, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Positron annihilation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs

    New search for: Gebauer, J.
    New search for: Krause-Rehberg, R.
    New search for: Domke, C.
    New search for: Ebert, P.
    New search for: Urban, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Positron annihilation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs

    Contributors:

    Gebauer, J. (author) / Krause-Rehberg, R. (author) / Domke, C. (author) / Ebert, P. (author) / Urban, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 258/263 ; 885-892

    Publication date:

    1997-01-01

    Size:

    8 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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