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    High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

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    High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

    New search for: Augustine, G.
    New search for: Hobgood, H. M.
    New search for: Balakrishna, V.
    New search for: Dunne, G. T.
    New search for: Hopkins, R. H.
    New search for: Thomas, R. N.
    New search for: Doolittle, W. A.
    New search for: Rohatgi, A.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
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    High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

    New search for: Augustine, G.
    New search for: Hobgood, H. M.
    New search for: Balakrishna, V.
    New search for: Dunne, G. T.
    New search for: Hopkins, R. H.
    New search for: Thomas, R. N.
    New search for: Doolittle, W. A.
    New search for: Rohatgi, A.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
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    Check availability in my library
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    Document information
    Title:

    High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

    Contributors:

    Augustine, G. (author) / Hobgood, H. M. (author) / Balakrishna, V. (author) / Dunne, G. T. (author) / Hopkins, R. H. (author) / Thomas, R. N. (author) / Doolittle, W. A. (author) / Rohatgi, A. (author) / Pensl, G. / Morkoc, H.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 9-12

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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