High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

Augustine, G. / Hobgood, H. M. / Balakrishna, V. et al. | British Library Online Contents | 1998

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

Seo, J. D. / An, J. H. / Kim, J. G. et al. | British Library Online Contents | 2007

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. et al. | British Library Online Contents | 2006

Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC

Katsuno, M. / Ohtani, N. / Fujimoto, T. et al. | British Library Online Contents | 2002

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals

Anderson, T. A. / Barrett, D. L. / Chen, J. et al. | British Library Online Contents | 2005