Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates: Fid-Bau Portal

Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates

Mitchell, S. / Spencer, M. G. / Wongchotigul, K.

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Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates

Mitchell, S. / Spencer, M. G. / Wongchotigul, K.

Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates

Mitchell, S. / Spencer, M. G. / Wongchotigul, K.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates

Contributors:

Mitchell, S. (author) / Spencer, M. G. (author) / Wongchotigul, K. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

Published in:

Silicon Carbide, III-Nitrides and Related Materials ; 231-234

MATERIALS SCIENCE FORUM ; 264/268

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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