The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers: Fid-Bau Portal

The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

Zhou, W. L. / Pirouz, P. / Powell, J. A.

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The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

Zhou, W. L. / Pirouz, P. / Powell, J. A.

The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

Zhou, W. L. / Pirouz, P. / Powell, J. A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

Contributors:

Zhou, W. L. (author) / Pirouz, P. (author) / Powell, J. A. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

Published in:

Silicon Carbide, III-Nitrides and Related Materials ; 417-420

MATERIALS SCIENCE FORUM ; 264/268

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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