A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Shrivastava, A. (author) / Muzykov, P. (author) / Pearman, B. (author) / Angel, S.M. (author) / Sudarshan, T.S. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 139-142
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
| British Library Online Contents | 2005
Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
| British Library Online Contents | 2014
The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers
| British Library Online Contents | 1998
Effects of thermal annealing on GaN epilayers deposited on (0001) sapphire
| British Library Online Contents | 2002
Inverted Pyramid Defects in 4H-SiC Epilayers
| British Library Online Contents | 2009