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Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
Scott, M. B. (author) / Scofield, J. D. (author) / Yeo, Y. K. (author) / Hengehold, R. L. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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