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    Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

    New search for: Tokuda, Y.
    New search for: Nakamura, W.
    New search for: Terashima, H.

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    Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

    New search for: Tokuda, Y.
    New search for: Nakamura, W.
    New search for: Terashima, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

    New search for: Tokuda, Y.
    New search for: Nakamura, W.
    New search for: Terashima, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

    Contributors:

    Tokuda, Y. (author) / Nakamura, W. (author) / Terashima, H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 288-291

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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