Diffusion and Precipitation of Oxygen in Silicon doped with Germanium: Fid-Bau Portal

Diffusion and Precipitation of Oxygen in Silicon doped with Germanium

Khirunenko, L. I. / Shakhovtsov, V. I. / Shumov, V. V.

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Diffusion and Precipitation of Oxygen in Silicon doped with Germanium

Khirunenko, L. I. / Shakhovtsov, V. I. / Shumov, V. V.

Diffusion and Precipitation of Oxygen in Silicon doped with Germanium

Khirunenko, L. I. / Shakhovtsov, V. I. / Shumov, V. V.

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Title:

Diffusion and Precipitation of Oxygen in Silicon doped with Germanium

Contributors:

Khirunenko, L. I. (author) / Shakhovtsov, V. I. (author) / Shumov, V. V. (author) / Davies, G. / Nazare, M. H.

Published in:

Defects in Semiconductors: ICDS 19 ; 1767-1772

MATERIALS SCIENCE FORUM ; 258/263

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Theory of Interstitial Oxygen in Silicon and Germanium

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