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Dislocation behavior in heavily germanium-doped silicon crystal

Taishi, T. / Huang, X. / Yonenaga, I. / Hoshikawa, K.

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Dislocation behavior in heavily germanium-doped silicon crystal

Taishi, T. / Huang, X. / Yonenaga, I. / Hoshikawa, K.

Dislocation behavior in heavily germanium-doped silicon crystal

Taishi, T. / Huang, X. / Yonenaga, I. / Hoshikawa, K.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Dislocation behavior in heavily germanium-doped silicon crystal

Contributors:

Taishi, T. (author) / Huang, X. (author) / Yonenaga, I. (author) / Hoshikawa, K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 5 ; 409-412

Publication date:

2002-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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