A platform for research: civil engineering, architecture and urbanism
On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes
On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes
On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes
Madhukar, A. (author) / Ramachandran, T. R. (author) / Konkar, A. (author) / Mukhametzhanov, I. (author) / Yu, W. (author) / Chen, P. (author)
APPLIED SURFACE SCIENCE ; 123/124 ; 266-275
1998-01-01
10 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Numerical simulations of island formation in a coherent strained epitaxial thin film system
British Library Online Contents | 1999
|Springer Verlag | 1988
|Island formation in Ge/Si epitaxy
British Library Online Contents | 1995
|Atomistic Aspects of Sige Nanostructure Formation by Molecular-Beam Epitaxy
Springer Verlag | 2002
|Atomistic simulations of focused ion beam machining of strained silicon
British Library Online Contents | 2017
|