Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer: Fid-Bau Portal

Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Takahashi, H. / Hashizume, T. / Hasegawa, H.

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Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Takahashi, H. / Hashizume, T. / Hasegawa, H.

Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Takahashi, H. / Hashizume, T. / Hasegawa, H.

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Document information

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Document information

Title:

Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Contributors:

Takahashi, H. (author) / Hashizume, T. (author) / Hasegawa, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 123/124 ; 615-618

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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