A semi-quantitative study of disorder in argon ion-bombarded crystalline silicon using Auger lineshape analysis: Fid-Bau Portal

A semi-quantitative study of disorder in argon ion-bombarded crystalline silicon using Auger lineshape analysis

Walker, E. / Lund, C. P. / Klauber, C. / Jennings, P. J. / Cornish, J. C. L. / Clare, B. W. / Hefter, G. T.

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A semi-quantitative study of disorder in argon ion-bombarded crystalline silicon using Auger lineshape analysis

Walker, E. / Lund, C. P. / Klauber, C. / Jennings, P. J. / Cornish, J. C. L. / Clare, B. W. / Hefter, G. T.

A semi-quantitative study of disorder in argon ion-bombarded crystalline silicon using Auger lineshape analysis

Walker, E. / Lund, C. P. / Klauber, C. / Jennings, P. J. / Cornish, J. C. L. / Clare, B. W. / Hefter, G. T.

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Document information

Title:

A semi-quantitative study of disorder in argon ion-bombarded crystalline silicon using Auger lineshape analysis

Contributors:

Walker, E. (author) / Lund, C. P. (author) / Klauber, C. (author) / Jennings, P. J. (author) / Cornish, J. C. L. (author) / Clare, B. W. (author) / Hefter, G. T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 126 ; 265-272

Publication date:

1998-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Lund, C. P. / Klauber, C. / Jennings, P. J. et al. | British Library Online Contents | 1997

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