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    Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface

    New search for: Prabhakaran, K.
    New search for: Kobayashi, Y.
    New search for: Ogino, T.

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    Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface

    New search for: Prabhakaran, K.
    New search for: Kobayashi, Y.
    New search for: Ogino, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface

    New search for: Prabhakaran, K.
    New search for: Kobayashi, Y.
    New search for: Ogino, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface

    Contributors:

    Prabhakaran, K. (author) / Kobayashi, Y. (author) / Ogino, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 130-132 ; 182-186

    Publication date:

    1998-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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