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    Growth of wurtzite GaN on (001) GaAs substrates at low temperature by atomic layer epitaxy

    New search for: Huang, S.-C.
    New search for: Wang, H.-Y.
    New search for: Hsu, C.-J.
    New search for: Gong, J.-R.
    New search for: Chiang, C.-I.
    New search for: Tu, S.-L.
    New search for: Chang, H.

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    Growth of wurtzite GaN on (001) GaAs substrates at low temperature by atomic layer epitaxy

    New search for: Huang, S.-C.
    New search for: Wang, H.-Y.
    New search for: Hsu, C.-J.
    New search for: Gong, J.-R.
    New search for: Chiang, C.-I.
    New search for: Tu, S.-L.
    New search for: Chang, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth of wurtzite GaN on (001) GaAs substrates at low temperature by atomic layer epitaxy

    New search for: Huang, S.-C.
    New search for: Wang, H.-Y.
    New search for: Hsu, C.-J.
    New search for: Gong, J.-R.
    New search for: Chiang, C.-I.
    New search for: Tu, S.-L.
    New search for: Chang, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Growth of wurtzite GaN on (001) GaAs substrates at low temperature by atomic layer epitaxy

    Contributors:

    Huang, S.-C. (author) / Wang, H.-Y. (author) / Hsu, C.-J. (author) / Gong, J.-R. (author) / Chiang, C.-I. (author) / Tu, S.-L. (author) / Chang, H. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE LETTERS ; 17 ; 1281-1286

    Publication date:

    1998-01-01

    Size:

    6 pages

    ISSN:

    0261-8028

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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