Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy: Fid-Bau Portal

Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

Lee, J.-S. / Iwai, S. / Isshiki, H. / Meguro, T. / Sugano, T. / Aoyagi, Y.

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Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

Lee, J.-S. / Iwai, S. / Isshiki, H. / Meguro, T. / Sugano, T. / Aoyagi, Y.

Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

Lee, J.-S. / Iwai, S. / Isshiki, H. / Meguro, T. / Sugano, T. / Aoyagi, Y.

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Check availability in my library

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Document information

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Document information

Title:

Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

Contributors:

Lee, J.-S. (author) / Iwai, S. (author) / Isshiki, H. (author) / Meguro, T. (author) / Sugano, T. (author) / Aoyagi, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 103 ; 275-278

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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