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Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Tang, S. (author) / Wallace, R. M. (author) / Seabaugh, A. (author) / King-Smith, D. (author)
APPLIED SURFACE SCIENCE ; 135 ; 137-142
1998-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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