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Thickness dependent integrity of gate oxide on SOI

Tsujiuchi, M. / Iwamatsu, T. / Naruoka, H. / Umeda, H. / Ipposhi, T. / Maegawa, S. / Inoue, Y.

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Thickness dependent integrity of gate oxide on SOI

Tsujiuchi, M. / Iwamatsu, T. / Naruoka, H. / Umeda, H. / Ipposhi, T. / Maegawa, S. / Inoue, Y.

Thickness dependent integrity of gate oxide on SOI

Tsujiuchi, M. / Iwamatsu, T. / Naruoka, H. / Umeda, H. / Ipposhi, T. / Maegawa, S. / Inoue, Y.

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Title:

Thickness dependent integrity of gate oxide on SOI

Contributors:

Tsujiuchi, M. (author) / Iwamatsu, T. (author) / Naruoka, H. (author) / Umeda, H. (author) / Ipposhi, T. (author) / Maegawa, S. (author) / Inoue, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 329-333

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Sant, S. B. / Wang, J. / Sampson, D. et al. | British Library Online Contents | 2008

Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity

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