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Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Evaluating the minimum thickness of gate oxide on silicon using first-principles method
Tang, S. (Autor:in) / Wallace, R. M. (Autor:in) / Seabaugh, A. (Autor:in) / King-Smith, D. (Autor:in)
APPLIED SURFACE SCIENCE ; 135 ; 137-142
01.01.1998
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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