Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors: Fid-Bau Portal

Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors

Lee, B.-T. / Kim, D.-K. / Moon, C.-K. / Kim, J. K. / Seo, Y. H. / Nahm, K. S. / Lee, H. J. / Lee, K.-W. / Yu, K.-S. / Kim, Y.

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Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors

Lee, B.-T. / Kim, D.-K. / Moon, C.-K. / Kim, J. K. / Seo, Y. H. / Nahm, K. S. / Lee, H. J. / Lee, K.-W. / Yu, K.-S. / Kim, Y.

Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors

Lee, B.-T. / Kim, D.-K. / Moon, C.-K. / Kim, J. K. / Seo, Y. H. / Nahm, K. S. / Lee, H. J. / Lee, K.-W. / Yu, K.-S. / Kim, Y.

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Document information

Title:

Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors

Contributors:

Lee, B.-T. (author) / Kim, D.-K. (author) / Moon, C.-K. (author) / Kim, J. K. (author) / Seo, Y. H. (author) / Nahm, K. S. (author) / Lee, H. J. (author) / Lee, K.-W. (author) / Yu, K.-S. (author) / Kim, Y. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 24-28

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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