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    Stoichiometric and dielectric properties of BaTiO~3 thin films prepared by backside pulsed ion-beam evaporation

    New search for: Sonegawa, T.
    New search for: Yatsui, K.

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    Stoichiometric and dielectric properties of BaTiO~3 thin films prepared by backside pulsed ion-beam evaporation

    New search for: Sonegawa, T.
    New search for: Yatsui, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Stoichiometric and dielectric properties of BaTiO~3 thin films prepared by backside pulsed ion-beam evaporation

    New search for: Sonegawa, T.
    New search for: Yatsui, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    Stoichiometric and dielectric properties of BaTiO~3 thin films prepared by backside pulsed ion-beam evaporation

    Contributors:

    Sonegawa, T. (author) / Yatsui, K. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE LETTERS ; 17 ; 1685-1687

    Publication date:

    1998-01-01

    Size:

    3 pages

    ISSN:

    0261-8028

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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