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Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels
Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels
Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels
Matulionis, A. (Autor:in) / Aninkevicius, V. (Autor:in) / Liberis, J. (Autor:in) / Matulioniene, I. (Autor:in) / Berntgen, J. (Autor:in)
MATERIALS SCIENCE FORUM ; 297/298 ; 155-158
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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