Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

    New search for: Boher, P.
    New search for: Stehle, J. L.
    New search for: Fogarassy, E.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Stuke, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

    New search for: Boher, P.
    New search for: Stehle, J. L.
    New search for: Fogarassy, E.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Stuke, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

    New search for: Boher, P.
    New search for: Stehle, J. L.
    New search for: Fogarassy, E.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Stuke, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

    Contributors:

    Boher, P. (author) / Stehle, J. L. (author) / Fogarassy, E. (author) / Boyd, I. W. / Perriere, J. / Stuke, M.

    Published in:

    Proceedings of Symposium G on Surface Processing: Laser, Lamp, Plasma of the 1998 E-MRS Spring Conference - Strasbourg, France, June 16-1998 ; 199-205

    APPLIED SURFACE SCIENCE ; 138/139

    Publication date:

    1999-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films

    Lopez, E. / Chiussi, S. / Serra, C. et al. | British Library Online Contents | 2003

    Excimer laser irradiation of SrRuO3 epitaxial thin films

    Benitez, F. / Roldan, J. / Trtik, V. et al. | British Library Online Contents | 2000

    Rapid thermal annealing of Zr/SiGeC contacts

    Barthula, M. / Aubry-Fortuna, V. / Meyer, F. et al. | British Library Online Contents | 1998

    Initial growth behaviors of SiGeC in SiGe and C alternate deposition

    Takeuchi, S. / Nakatsuka, O. / Wakazono, Y. et al. | British Library Online Contents | 2005

    In Situ Fast Temperature Measurement of Silicon Thin Films during the Excimer Laser Annealing

    Moon, S. J. | British Library Online Contents | 2006

    Back to top