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    Initial growth behaviors of SiGeC in SiGe and C alternate deposition

    New search for: Takeuchi, S.
    New search for: Nakatsuka, O.
    New search for: Wakazono, Y.
    New search for: Sakai, A.
    New search for: Zaima, S.
    New search for: Yasuda, Y.

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    Initial growth behaviors of SiGeC in SiGe and C alternate deposition

    New search for: Takeuchi, S.
    New search for: Nakatsuka, O.
    New search for: Wakazono, Y.
    New search for: Sakai, A.
    New search for: Zaima, S.
    New search for: Yasuda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Initial growth behaviors of SiGeC in SiGe and C alternate deposition

    New search for: Takeuchi, S.
    New search for: Nakatsuka, O.
    New search for: Wakazono, Y.
    New search for: Sakai, A.
    New search for: Zaima, S.
    New search for: Yasuda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Initial growth behaviors of SiGeC in SiGe and C alternate deposition

    Contributors:

    Takeuchi, S. (author) / Nakatsuka, O. (author) / Wakazono, Y. (author) / Sakai, A. (author) / Zaima, S. (author) / Yasuda, Y. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 5-9

    Publication date:

    2005-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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