Properties of BaBi~2Ta~2O~9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications: Fid-Bau Portal

Properties of BaBi~2Ta~2O~9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

Foschini, C. R. / Joshi, P. C. / Varela, J. A. / Desu, S. B.

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Properties of BaBi~2Ta~2O~9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

Foschini, C. R. / Joshi, P. C. / Varela, J. A. / Desu, S. B.

Properties of BaBi~2Ta~2O~9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

Foschini, C. R. / Joshi, P. C. / Varela, J. A. / Desu, S. B.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

Properties of BaBi~2Ta~2O~9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

Contributors:

Foschini, C. R. (author) / Joshi, P. C. (author) / Varela, J. A. (author) / Desu, S. B. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 1860-1864

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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